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 DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PESDxL2UM series Low capacitance double ESD protection diode
Product specification 2003 Aug 05
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
FEATURES * Uni-directional ESD protection of two lines or bi-directional ESD protection of one line * Reverse standoff voltage 3.3 and 5 V * Low diode capacitance * Ultra low leakage current * Leadless ultra small SOT883 surface mount package (1 x 0.6 x 0.5 mm) * Board space 1.17 mm2 (approx. 10% of SOT23) * ESD protection >15 kV * IEC 61000-4-2; level 4 (ESD); 15 kV (air) or 8 kV (contact). APPLICATIONS * Cellular handsets and accessories * Portable electronics * Computers and peripherals * Communication systems * Audio and video equipment. MARKING TYPE NUMBER PESD3V3L2UM PESD5V0L2UM MARKING CODE F2 F1
2 Top view
PESDxL2UM series
DESCRIPTION Low capacitance ESD protection diode in a three pad SOT883 leadless ultra small plastic package designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. PINNING PIN 1 2 3 cathode 1 cathode 2 common anode DESCRIPTION
handbook, halfpage
2
1
3 3
1 Bottom view
MLE220
Fig.1 Simplified outline (SOT883) and symbol.
2003 Aug 05
2
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode Ipp peak pulse current PESD3V3L2UM PESD5V0L2UM Ppp IFSM IZSM peak pulse power non-repetitive peak forward current non-repetitive peak reverse current PESD3V3L2UM PESD5V0L2UM Ptot PZSM Tstg Tj ESD total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature electrostatic discharge Tamb = 25 C; note 4 8/20 s pulse; notes 1, 2 and 3 tp = 1 ms; square pulse tp = 1 ms; square pulse 8/20 s pulse; notes 1, 2 and 3 PARAMETER CONDITIONS
PESDxL2UM series
MIN.
MAX.
UNIT
- - - - - - - - -65 - IEC 61000-4-2 (contact discharge) HBM MIL-Std 883 15 10 tp = 1 ms; square pulse; see Fig.4
3 2.5 30 3.5 0.9 0.8 250 6 +150 150 - -
A A W A A A mW W C C kV kV
Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. 4. Device mounted on standard printed-circuit board. ESD standards compliance IEC 61000-4-2, level 4 (ESD) HBM MIL-Std 883, class 3 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS all diodes loaded; note 1 one diode loaded; note 2 Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 m copper strip line. 2. FR4 single-sided copper 1 cm2. VALUE 500 290 UNIT K/W K/W >15 kV (air); >8 kV (contact) >4 kV
2003 Aug 05
3
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VF VRWM forward voltage reverse stand-off voltage PESD3V3L2UM PESD5V0L2UM IRM reverse leakage current PESD3V3L2UM PESD5V0L2UM V(CL)R clamping voltage PESD3V3L2UM VR = 3.3 V VR = 5 V 8/20 s pulse Ipp = 1 A; notes 1 and 2 Ipp = 3 A; notes 1 and 2 Ipp = 1 A; notes 1 and 3 Ipp = 3 A; notes 1 and 3 PESD5V0L2UM Ipp = 1 A; notes 1 and 2 Ipp = 2.5 A; notes 1 and 2 Ipp = 1 A; notes 1 and 3 Ipp = 2.5 A; notes 1 and 3 VBR breakdown voltage PESD3V3L2UM PESD5V0L2UM SZ temperature coefficient PESD3V3L2UM PESD5V0L2UM rdiff differential resistance PESD3V3L2UM PESD5V0L2UM Cd diode capacitance PESD3V3L2UM PESD5V0L2UM f = 1 MHz; VR = 0 f = 1 MHz; VR = 5 f = 1 MHz; VR = 0 f = 1 MHz; VR = 5 Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. - - - - IR = 1 mA - - IZ = 1 mA - - IZ = 1 mA 5.32 6.46 - - - - - - - - - - - - IF = 200 mA - PARAMETER CONDITIONS
PESDxL2UM series
MIN.
TYP.
MAX.
UNIT
1 - - 75 5 - - - - - - - - 5.6 6.8 1.3 2.9 - - 22 12 16 8
1.2 3.3 5 300 25 8 12 9 13 10 13 11 15 5.88 7.14 - - 200 100 28 17 19 11
V V V nA nA V V V V V V V V V V mV/K mV/K pF pF pF pF
2003 Aug 05
4
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
handbook, halfpage
10
MLE215
handbook, halfpage
26
MLE216
IZSM (A)
Cd (pF)
22
18 PESD3V3L2UM 1 PESD3V3L2UM 14 PESD5V0L2UM PESD5V0L2UM
10
10-1 10-2
10-1
1
tp (ms)
10
6 0 1 2 3 4 VR (V) 5
Tj = 25 C; f = 1 MHz.
Fig.2
Non-repetitive peak reverse current as a function of pulse time (square pulse).
Fig.3
Diode capacitance as a function of reverse voltage; typical values.
102 handbook, halfpage PZSM (W)
MLE217
handbook, halfpage
120
MLE218
Ipp (%)
100 % Ipp; 8 s
80 PESD3V3L2UM 10 PESD5V0L2UM 40
e-t 50 % Ipp; 20 s
1 10-2
10-1
1
tp (ms)
10
0 0 10 20 30 t (s) 40
PZSM = VZSM x IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.4
Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse).
Fig.5
8/20 s pulse waveform according to IEC 61000-4-5.
2003 Aug 05
5
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
handbook, full pagewidth
ESD TESTER RZ CZ note 1 1
450
RG 223/U 50 coax
10x ATTENUATOR
4 GHz DIGITAL OSCILLOSCOPE 50
2 D.U.T PESDxL2UM 3
Note 1: IEC 61000-4-2 network CZ = 150 pF; RZ = 330
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 5 V/div horizontal scale = 50 ns/div
GND2
PESD5V0L2UM
PESD3V3L2UM GND GND1 unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 5 V/div horizontal scale = 50 ns/div
unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
MLE219
Fig.6 ESD clamping test set-up and waveforms.
2003 Aug 05
6
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
PESDxL2UM series
SOT883
L 2 b e
L1
3
b1
1
e1
A A1
E
D
0
0.5 scale
1 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22
Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03
2003 Aug 05
7
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development
PESDxL2UM series
DEFINITION This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2003 Aug 05
8
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp9
Date of release: 2003
Aug 05
Document order number:
9397 750 11644


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